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28 August 2003 EUVL: transition from research to commercialization
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Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504239
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan
Abstract
The Extreme Ultraviolet Lithography (EUVL) technology is transitioning from the basic research and technology demonstration phase into commercialization. All key EUVL system modules have been demonstrated with an Engineering Test Stand (ETS) and the system has been used to provide the basic learning for developing commercial EUVL tools. Full field scanned printing has been demonstrated. Full field masks have been produced and methods have been demonstrated for defect repair for both mask blanks and for patterned masks. Major European, Japanese, and US consortia in partnership with over 100 industrial companies are supporting the establishment of the EUVL infrastructure. The remaining challenges have been identified and laboratory and industrial support are continuing to reduce the risks for developing beta and production tools. Production tools are expected to be introduced in the 2007 time frame to support aggressively implementation of 45 nm node geometries with volume production support for the 32 nm node in 2009.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Charles W. Gwyn and Peter J. Silverman "EUVL: transition from research to commercialization", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504239
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