Improvement of critical dimension stability of chemically amplified resist by overcoat II

Teruhiko Kumada; Koji Tange; Kazuyuki Maetoko; Kunihiro Hosono; Masayoshi Tsuzuki; Kyoichi Yonetani; Reiji Terada; Yukio Nakashiba; Shingo Anzai; Yasutaka Kikuchi

doi:10.1117/12.504182

28 August 2003 Improvement of critical dimension stability of chemically amplified resist by overcoat II

Teruhiko Kumada, Koji Tange, Kazuyuki Maetoko, Kunihiro Hosono, Masayoshi Tsuzuki, Kyoichi Yonetani, Reiji Terada, Yukio Nakashiba, Shingo Anzai, Yasutaka Kikuchi

Author Affiliations +

Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504182
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan

Abstract

The critical dimensions (CD) change by the process delay is the most critical issue to apply the chemically amplified resists (CAR) for photomask fabrication. In the photomask fabrication processes, the resist should have both post coating delay (PCD) and post exposure delay (PED) stability, while keeping higher sensitivity. To achieve this requirement, overcoat process has been examined for the purpose of CD stabilization in CAR process for photomask manufacture. The material, which consists of hydrophobic polymer and PAG, was used for the overcoat in this study. Consequently, it has become clear that pattern formations have been possible without unnecessary thickness loss. Moreover, it has been proved that the overcoat shows the effect of controlling CD change and improvement of CD uniformity. From these results, it is thought that the overcoat process is promising for the size stabilization in photomask manufacture for devices less than 90 nm.

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Teruhiko Kumada, Koji Tange, Kazuyuki Maetoko, Kunihiro Hosono, Masayoshi Tsuzuki, Kyoichi Yonetani, Reiji Terada, Yukio Nakashiba, Shingo Anzai, and Yasutaka Kikuchi "Improvement of critical dimension stability of chemically amplified resist by overcoat II", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504182

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