Optical properties of a-Si films for 157-nm lithography

SungKwan Kim; YangSoo Kim; Myung-Ah Kang; Jung-Min Sohn; Kwangsoo No

doi:10.1117/12.504180

28 August 2003 Optical properties of a-Si films for 157-nm lithography

SungKwan Kim, YangSoo Kim, Myung-Ah Kang, Jung-Min Sohn, Kwangsoo No

Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504180
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan

Abstract

In our previous study, a-Si thin films were suggested as a passivation layer to prevent the degradation of Si-O-N-F films that were phase shift materials for 157 nm optical lithography. However few studies about the optical properties of a-Si in the deep ultraviolet (DUV) region have been reported. a-Si thin films having thickness of less than 25 nm were deposited using dc magnetron sputtering with a mesh to ensure the uniformity. The thickness, composition and optical properties of a-Si were analyzed with SEM, AES, UV spectroscopy and a VUV spectroscopic ellipsometer. Using the results of spectroscopic ellipsometry (SE) analysis, optical properties, including absorbance, transmittance, optical band gap and optical constants (n, k), of a-Si films with different thickness (11 to approximately 25 nm) were analyzed using the model of EMA(a-Si+SiO)/a-Si (EMA:effective medium approximation). From the SE analysis of a-Si films, we onfirmed that a-Si film with high transmittance in DUV could be used as a passivation layer of Si-O-N-F films.

Citation Download Citation

SungKwan Kim, YangSoo Kim, Myung-Ah Kang, Jung-Min Sohn, and Kwangsoo No "Optical properties of a-Si films for 157-nm lithography", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504180

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