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28 August 2003 Qualification of alternating PSM: defect inspection analysis in comparison to wafer printing results
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Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504202
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan
Abstract
With alternating phase shift masks (altPSM) an enhancement technique is available to realize smaller design rules. Meanwhile the basic production process for this mask type is well known and established for 193nm technology development. The qualification of the masks is now in the focus of development work. Sensitive defect inspection is essential for the qualification of altPSMs. In addition accurate phase and transmission balancing measurement technique has to be applied. In this paper we are presenting a detailed defect printability study for sub-100nm feature size technology at 193nm wavelength. Programmed quartz defects with different shapes and sizes were designed. They were implemented in a lines/spaces altPSM design. The processed quartz defects were characterized with a scanning electron microscope and an arial imaging microscope system. The printing behavior of the defects was analyzed after wafer exposures. In addition the required sensitivity for the altPSM inspection was evaluated. Finally the inspection sensitivity was characterized and optimized with programmed and production like defects.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wolfgang Dettmann, Jan P. Heumann, Tanja Hagner, Roderick Koehle, Stephen Rahn, Martin Verbeek, Mardjan Zarrabian, Jens Weckesser, Mario Hennig, and Nicolo Morgana "Qualification of alternating PSM: defect inspection analysis in comparison to wafer printing results", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504202
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