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28 August 2003 Technological capability and future enhanced performance of HL-7000M
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Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504275
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan
Abstract
HL-7000M electron beam lithography system has been developed as a state-of-the-art reticle writer for the generation of 90nm node production and 65nm node development. It is capable of handling relatively large volume data files such as full Optical Proximity Correction patterns and angled patterns for System on Chip. Aiming at technological requirements, a newly designed electron optics column generating a vector-scan variable shaped beam and a digital disposition system with a storage area network technology have been integrated into HL-7000M. Since the requirement on the critical dimension uniformity is extremely demanding on the ITRS roadmap, HL-7000M has also needed to improve its beam shaping performance. The ability relevant to shaping beam size has a great impact on its line width or critical dimension accuracy. To reduce an aberration caused within the shaping lens system, the dual quadrupole electrostatic shaping deflector has been utilized. By applying advanced technologies, HL-7000M with a result of critical dimension uniformity (2.5nm and 2.8nm in 3σ) has achieved meeting its target requirement of the 90nm generation for production. Additionally HL-7000M has proved its potential, allowing the industry to establish quickly the processes further beyond the requirements of the 65nm node for development.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masaomi Tanaka, Suyo Asai, H. Kawano, Ken Iizumi, Kazuyoshi Oonuki, Hiroyuki Takahashi, Hidetoshi Sato, Rikio Tomiyoshi, Kazui Mizuno, Genya Matsuoka, and Hiroya Ohta "Technological capability and future enhanced performance of HL-7000M", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504275
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