Laser-induced backside wet etching of fused silica: absorption coefficient dependence

Csaba Vass; Bela Hopp; Tomi Smausz

doi:10.1117/12.513623

9 April 2003 Laser-induced backside wet etching of fused silica: absorption coefficient dependence

Csaba Vass, Bela Hopp, Tomi Smausz

Proceedings Volume 5131, Third GR-I International Conference on New Laser Technologies and Applications; (2003) https://doi.org/10.1117/12.513623
Event: Third GR-I International Conference on New Laser Technologies and Applications, 2003, San Diego, CA, United States

Abstract

The micromachining process of transparent materials by laser induced backside wet etching (LIBWE) was investigated. Fused silica targets were irradiated by an ArF excimer laser at 2.14 J/cm² fluence and naphthalene solved in methyl-methacrylate with different concentrations were used as absorbing liquid. The absorption coefficient of thse solutions was measured by a plano-concave microcuvette and it found to be between 39426 and 62350 1/cm depending on the concentration of napthalene. It was demonstrated that the etch rate depends on the absorption coefficient linearly, while the roughness does not. The dependence of the etch rate can be explained as follows. The absorbed energy in the interface of the solution and the fused silica increases when increasing the absorption coefficient resulting in higher temperature liquid layer at the surface of the fused silica causing higher etch rate.

Citation Download Citation

Csaba Vass, Bela Hopp, and Tomi Smausz "Laser-induced backside wet etching of fused silica: absorption coefficient dependence", Proc. SPIE 5131, Third GR-I International Conference on New Laser Technologies and Applications, (9 April 2003); https://doi.org/10.1117/12.513623

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