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22 October 2003 Assessment of the LPE growth of HgCdTe from Te-rich melt by the tipping method
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Abstract
This paper describes and assesses growth of Hg1-xCdxTe (MCT) layers by liquid phase epitaxy (LPE) from Te-rich solutions by the tipping (rotating) method. Epitaxial layers with different compositions from x = 0.18 to x = 0.22 and thicknesses from 10 to 20 μm were grown on (111)B oriented CdZnTe substrates. Growth was carried out in the temperature range 460 - 480°C with cooling rates 0.05 - 0.1°C/min and under flowing H2. The attention was paid mainly to the surface morphological quality, good decantation from the layers, uniformity of composition and thickness of films. HgCdTe layers were characterized using different methods: microscopic examinations, infrared microscopic transmission, secondary ion mass spectrometry and scanning electron microscopic measurements. By optimizing the growth parameters and construction of graphite boat it was possible to obtain high quality Hg1-xCdxTe photodiodes.
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Leszek Kubiak, Pawel Madejczyk, Piotr Martyniuk, and Jaroslaw Rutkowski "Assessment of the LPE growth of HgCdTe from Te-rich melt by the tipping method", Proc. SPIE 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics, (22 October 2003); https://doi.org/10.1117/12.519674
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