Assessment of the LPE growth of HgCdTe from Te-rich melt by the tipping method

Leszek Kubiak; Pawel Madejczyk; Piotr Martyniuk; Jaroslaw Rutkowski

doi:10.1117/12.519674

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22 October 2003 Assessment of the LPE growth of HgCdTe from Te-rich melt by the tipping method

Leszek Kubiak, Pawel Madejczyk, Piotr Martyniuk, Jaroslaw Rutkowski

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Proceedings Volume 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics; (2003) https://doi.org/10.1117/12.519674
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

This paper describes and assesses growth of Hg_1-xCd_xTe (MCT) layers by liquid phase epitaxy (LPE) from Te-rich solutions by the tipping (rotating) method. Epitaxial layers with different compositions from x = 0.18 to x = 0.22 and thicknesses from 10 to 20 μm were grown on (111)B oriented CdZnTe substrates. Growth was carried out in the temperature range 460 - 480°C with cooling rates 0.05 - 0.1°C/min and under flowing H₂. The attention was paid mainly to the surface morphological quality, good decantation from the layers, uniformity of composition and thickness of films. HgCdTe layers were characterized using different methods: microscopic examinations, infrared microscopic transmission, secondary ion mass spectrometry and scanning electron microscopic measurements. By optimizing the growth parameters and construction of graphite boat it was possible to obtain high quality Hg_1-xCd_xTe photodiodes.

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Leszek Kubiak, Pawel Madejczyk, Piotr Martyniuk, and Jaroslaw Rutkowski "Assessment of the LPE growth of HgCdTe from Te-rich melt by the tipping method", Proc. SPIE 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics, (22 October 2003); https://doi.org/10.1117/12.519674

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