Compensation of long-range process effects on photomasks by design data correction

Martin Bloecker; Gerd Ballhorn; Jens Schneider; Nikola Belic; Hans Eisenmann; Danny Keogan

doi:10.1117/12.515122

28 May 2003 Compensation of long-range process effects on photomasks by design data correction

Martin Bloecker, Gerd Ballhorn, Jens Schneider, Nikola Belic, Hans Eisenmann, Danny Keogan

Proceedings Volume 5148, 19th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2003) https://doi.org/10.1117/12.515122
Event: 19th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 2003, Sonthofen, Germany

Abstract

CD requirements for advanced photomasks are getting very demanding for the 100 nm-node and below; the ITRS roadmap requires CD uniformities below 10 nm for the most critical layers. To reach this goal, statistical as well as systematic CD contributions must be minimized. Here, we focus on the reduction of systematic CD variations across the masks that may be caused by process effects, e.g. dry etch loading.

Citation Download Citation

Martin Bloecker, Gerd Ballhorn, Jens Schneider, Nikola Belic, Hans Eisenmann, and Danny Keogan "Compensation of long-range process effects on photomasks by design data correction", Proc. SPIE 5148, 19th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (28 May 2003); https://doi.org/10.1117/12.515122

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