Paper
28 May 2003 Performance of the aerial image measurement system for 157-nm lithography
Peter Kuschnerus, Thomas Engel, Wolfgang Harnisch, Claudia Hertfelder, Axel M. Zibold, Jan-Peter Urbach, Christof M. Schilz, Klaus Eisner
Author Affiliations +
Proceedings Volume 5148, 19th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2003) https://doi.org/10.1117/12.514958
Event: 19th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 2003, Sonthofen, Germany
Abstract
The first Aerial Image Measurement System (AIMSTM) for 157 nm lithography worldwide has been brought into operation successfully. Its performance will be demonstrated by AIMSTM measurements at 157 nm wavelength on binary chrome masks. Several through focus series have been measured in order to calculate the process windows for various structures with feature sizes at mask level of 300 nm and below. The latest results on enhanced illumination stability will be presented and a resolution that will enable an extension of the tool usage down to the 45 nm node. Using off-axis illumination 150 nm lines and spaces mask structures have been resolved.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter Kuschnerus, Thomas Engel, Wolfgang Harnisch, Claudia Hertfelder, Axel M. Zibold, Jan-Peter Urbach, Christof M. Schilz, and Klaus Eisner "Performance of the aerial image measurement system for 157-nm lithography", Proc. SPIE 5148, 19th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (28 May 2003); https://doi.org/10.1117/12.514958
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KEYWORDS
Photomasks

Lithography

Lithographic illumination

CCD image sensors

Charge-coupled devices

Vacuum ultraviolet

Binary data

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