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28 May 2003 Selete activity of 157-nm lithography and masks
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Proceedings Volume 5148, 19th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2003) https://doi.org/10.1117/12.515146
Event: 19th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 2003, Sonthofen, Germany
Abstract
Selete takes charge of the development of device and process technologies in 'Asuka" project which object is the technology development for 65nm node SoC devices. In the field of lithography, Selete has two major programs. One is 157nm lithography and related mask development, the other is EPL. In this paper, development activities of 157nm lithography program and the mask program in Selete are described. In the 157nm lithography program, exposure tool technology, resist, processing and resolution enhancement technique are developed collaborating with tool and material suppliers. In the mask program, mask key tools are developed by joint work with mask suppliers and tool suppliers.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nobuyuki Yoshioka, Toshiro Itani, and Wataru Wakamiya "Selete activity of 157-nm lithography and masks", Proc. SPIE 5148, 19th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (28 May 2003); https://doi.org/10.1117/12.515146
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