Simulation study of pattern printability for reflective mask in EUV lithography

Minoru Sugawara; Akira Chiba; Iwao Nishiyama

doi:10.1117/12.515147

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28 May 2003 Simulation study of pattern printability for reflective mask in EUV lithography

Minoru Sugawara, Akira Chiba, Iwao Nishiyama

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Proceedings Volume 5148, 19th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2003) https://doi.org/10.1117/12.515147
Event: 19th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 2003, Sonthofen, Germany

Abstract

Optical proximity effect corrections (OPC) and printability for phase shift masks were examined through simulations. Off-axis illumination exposing a reflective mask gives rise to a shadowing effect that produces an imbalance in the intensity distribution of the light diffracted from mask patterns. It was found that the shifts in the edges of 30-nm-wide T-shaped patterns on a wafer due to both shadowing and optical proximity effects could be corrected simultaneously at an incident angle of 4.84° to obtain the proper edge positions. An attenuated phase shift mask with various values for the attenuated reflectance was used to evaluate the printability of isolated line and hole patterns. Annular illumination was found to increase the DOF for isolated patterns 18 nm wide on a wafer, and a DOF of 300 nm was obtained for hole patterns 40nm wide on a wafer. Printability was also evaluated for an alternating phase shift mask (alt-PSM) with an additive structure. An alt-PSM significantly increases the pattern contrast and enlarges the DOF up to 300 urn for isolated patterns 18 nm wide on a wafer.

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Minoru Sugawara, Akira Chiba, and Iwao Nishiyama "Simulation study of pattern printability for reflective mask in EUV lithography", Proc. SPIE 5148, 19th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (28 May 2003); https://doi.org/10.1117/12.515147

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