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10 November 2003 Microwave-assisted far-infrared photoconductivity in high-purity GaAs
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Abstract
We have observed, for the first time, microwave-assisted photoconductivity in high purity GaAs. The enhancement of response appears to be dictated by two distinct mechanisms. First, a broadband enhancement which is believed to be due to detrapping of the free carriers and, therefore, increased photoconductive gain. Secondly, microwave-ionization of the excited states. We expect that both of these mechanisms contribute very little, if any, to the detector noise and, therefore, improve the detector's NEP. In this paper, we report the results of our preliminary tests showing broadband enhancement in response and an indication of enhancement of the excited-state response. Further investigation is currently underway.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jam Farhoomand, Robert E McMurray Jr., David L Sisson, and Christopher T Koerber "Microwave-assisted far-infrared photoconductivity in high-purity GaAs", Proc. SPIE 5152, Infrared Spaceborne Remote Sensing XI, (10 November 2003); https://doi.org/10.1117/12.510383
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