Paper
22 January 2004 InGaAs MSM photodetectors modeling using DOE analysis
Zhaoran Huang, Cheolung Cha, Shuodan Chen, Tomas Sarmiento, Jeng Jung Shen, Nan M. Jokerst, Martin A. Brooke, Gary May, April S. Brown
Author Affiliations +
Abstract
Linear statistical models have been generated to predict the performance of metal-semiconductor-metal (MSM) PDs for multi-gigabit optical interconnections. The models estimate the bandwidth and responsivity of the MSM PDs based on the input factors: absorbing layer thickness, detector size, finger widths and finger gaps. The design of experiments (DOE) approach was employed to obtain the necessary data to construct the models. Numerous samples were fabricated so that multiple devices measurements could serve to both construct and verify the linear statistical models. The MSM PDs were fabricated from material with structure InAlAs/InAlGaAs/InGaAs (2000Å, 3000Å or 5000Å, absorbing layer)/InAlAs. The MSM interdigitated fingers were photolithographically defined with finger gaps and widths varying as DOE parameters. A benzocyclobutene (BCB, Cyclotene 35) layer was spin-coated onto all of the samples as isolation from the probing pads. In the bandwidth analysis, the detector size (S) and material thickness (T) were investigated with a fixed finger width (1 μm) and gap (1 μm). Taking the measured results of these detectors in the design matrix, and using least square regression, the model equations were derived as: Bandwidth (GHz) = 12.87 - 0.065S - 3T - 0.02ST. After these equations were developed, predictive calculated results from these equations were then further used to predict and compare measured results on devices that were not used in the statistical model. This leads to an average deviation between predicted and measured bandwidth of less than 5%. In the responsivity analysis, the predictive calculation leads to an average deviation less than 11%.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhaoran Huang, Cheolung Cha, Shuodan Chen, Tomas Sarmiento, Jeng Jung Shen, Nan M. Jokerst, Martin A. Brooke, Gary May, and April S. Brown "InGaAs MSM photodetectors modeling using DOE analysis", Proc. SPIE 5178, Optical Modeling and Performance Predictions, (22 January 2004); https://doi.org/10.1117/12.507337
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KEYWORDS
Palladium

Statistical analysis

Diffractive optical elements

Data modeling

Indium gallium arsenide

Photodetectors

Measurement devices

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