Paper
31 December 2003 Mask and source optimization for lithographic imaging systems
Andreas Erdmann, Richard Farkas, Tim Fuehner, Bernd Tollkuehn, Gabriela Kokai
Author Affiliations +
Abstract
This article proposes a new optimization procedure for mask and illumination geometries in optical projection lithography. A general merit function is introduced that evaluates the imaging performance of arbitrary line patterns over a certain focus range. It also takes into account certain technological aspects that are defined by the manufacturability and inspectability of the mask. Automatic optimization of the mask and illumination parameters with a genetic algorithm identifies optimum imaging conditions without any additional a-priori knowledge about lithographic processes. Several examples demonstrate the potential of the proposed concept.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andreas Erdmann, Richard Farkas, Tim Fuehner, Bernd Tollkuehn, and Gabriela Kokai "Mask and source optimization for lithographic imaging systems", Proc. SPIE 5182, Wave-Optical Systems Engineering II, (31 December 2003); https://doi.org/10.1117/12.504732
Lens.org Logo
CITATIONS
Cited by 4 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photomasks

Lithography

Critical dimension metrology

Binary data

Genetic algorithms

Lithographic illumination

Optimization (mathematics)

Back to Top