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26 January 2004 Fabrication of high-lumen InGaN flip chip LEDs
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Abstract
The factors critical to the fabrication of high-lumen InGaN flip chip LEDs are discussed. It is shown that as the die size and the current density increase, the n-GaN sheet conductivity becomes extremely critical to uniform current spreading and the corresponding uniformity of light emission. It is observed that a thick p-metal is important in reducing hot spot formation. The p-contact is also critical to increasing light extraction efficiency and wall-plug efficiency. The merits and reliability of Al- and Ag-based p-contacts are compared. Reliability issues related to the n-contact are also discussed. Finally, performance data for InGaN blue lamps, for drive currents up to 900 mA is shown.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hari S. Venugopalan, Xiang Gao, Tingting Zhang, Bryan S. Shelton, Anthony DiCarlo, Ivan Eliashevich, and Michael Hsing "Fabrication of high-lumen InGaN flip chip LEDs", Proc. SPIE 5187, Third International Conference on Solid State Lighting, (26 January 2004); https://doi.org/10.1117/12.514073
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