Radioactive decay of excitations in ZnSe (Te)

S. I. Gordeev; Sergey N. Galkin; S. A. Kostyukevich; A. I. Lalayants; Vladimir D. Ryzhikov; Alexander V. Tolmachev; E. F. Voronkin; E. K. Lisetskaja

doi:10.1117/12.508381

4 November 2003 Radioactive decay of excitations in ZnSe (Te)

S. I. Gordeev, Sergey N. Galkin, S. A. Kostyukevich, A. I. Lalayants, Vladimir D. Ryzhikov, Alexander V. Tolmachev, E. F. Voronkin, E. K. Lisetskaja

Author Affiliations +

Proceedings Volume 5188, Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies; (2003) https://doi.org/10.1117/12.508381
Event: Optical Science and Technology, SPIE's 48th Annual Meeting, 2003, San Diego, California, United States

Abstract

Electro optical characteristics of the semiconductor compounds has been researched from the discovery of the semiconductor materials. One of the perspective ideas in this field was the possibility to obtain "cool" phosphorescence’s by means of the relaxations of the energy by recombination of excited electroni -holder pairs. In this work the conditions of obtaining of the electro luminescent structures based ZnSe(Te), their characteristics and structure of optical - and electro-luminescence centers are investigated. The Structure Me|ZnSe(Te):Zn|ZnO|ITO has shown the characteristics of the led, having bands of the radiation in the field of 540, 640 and 740 nm. The branch of the direct mode had a negative nonmonotonic area, because the thickness of ZnO quantum-dimensioned. The resemblance o the spectrums of electroluminescence of the crystals in abundance of Zn and film structures, which were obtained using the method of vacuum condensation results in that surface, cathode, nature of luminescence of ZnSe(Te) is possible to b explained in account of injection of the carriers in semiconductor.

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S. I. Gordeev, Sergey N. Galkin, S. A. Kostyukevich, A. I. Lalayants, Vladimir D. Ryzhikov, Alexander V. Tolmachev, E. F. Voronkin, and E. K. Lisetskaja "Radioactive decay of excitations in ZnSe (Te)", Proc. SPIE 5188, Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies, (4 November 2003); https://doi.org/10.1117/12.508381

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