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10 November 2003 Variations in design for a nanoscale silicon laser
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In the design of optoelectronic devices, size and compatibility with current technology are two significant considerations. A much desired optoelectronic laser design would be one in which the laser formed a very small integrated component of a silicon microchip and was fabricated entirely from CMOS compatible materials. Until recently, the prospect for such a device seemed unlikely, and the future of optoelectronic functionality appeared to lie largely with direct bandgap semiconductors such as GaAs. However, the recent observation of optical gain in silicon nanocrystals has opened an opportunity to develop a nanoscale silicon-based laser. In this paper we report on various designs that could be used to achieve such a breakthrough. The designs are based on photonic crystal architecture and utilize Si nanocrystals embedded in SiO2 for the lasing media. The designs could be employed for other nanolasers providing specific lasing criteria are met.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Supriya L. Jaiswal and Pamela M. Norris "Variations in design for a nanoscale silicon laser", Proc. SPIE 5191, Optical Diagnostics for Fluids, Solids, and Combustion II, (10 November 2003);

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