Paper
7 January 2004 High-power laser-produced plasma source for nanolithography
Author Affiliations +
Abstract
JMAR develops Laser-Produced Plasma (LPP) sources for lithography applications, and has specifically developed Collimated laser-Plasma Lithography (CPL) as a 1 nm collimated point source and stepper system to address sub-100nm lithography needs. We describe the CPL source development, show demonstrated sub-100nm printing capability, and describe status of a beta lithography tool. The system will be power-scaled to address silicon device contacts and vias at 90nm and below. This development has much in common with LPP Extreme UltraViolet Lithography (EUVL) sources; an EUV source concept is presented to address the high power requirements of that Next Generation Lithography (NGL).
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard Alan Forber, Celestino J. Gaeta, Harry Rieger, Heinz Siegert, Scott McLeod, and Brent E. Boerger "High-power laser-produced plasma source for nanolithography", Proc. SPIE 5196, Laser-Generated and Other Laboratory X-Ray and EUV Sources, Optics, and Applications, (7 January 2004); https://doi.org/10.1117/12.514053
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KEYWORDS
X-rays

Extreme ultraviolet

Amplifiers

Lithography

Plasma

Tin

Laser development

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