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7 January 2004 Ultrafast x-ray diffraction studies on Si(111) and DMABN crystals using Cu-K-α radiation
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A novel laser-pumped X-ray source is used to investigate generation of shock waves in a semiconductor and conformational changes in a molecular crystal. Ultrashort Cu-Kα pulses are generated by focusing 130 fs laser pulses from the ATLAS titanium-sapphire laser of our institute on a slowly moving copper tape. Irradiating Si(111) surfaces with a few 100 mJ/cm2 pulses at 800 nm we observe an increase in the integrated reflection on a relatively slow time scale of several 100 ps. This observation is explained by the increased geometrical structure factor generated by the shock wave propagating into a mosaic crystal. The work on conformational changes was performed with DMABN (dimethylaminobenzonitrile, sum formula C9H10N2). A pump-probe experiment using the third harmonic of the titanium-sapphire laser (λ = 265 nm) as the pump yields indications of an increase of the 004 reflection in a time shorter than 10 ps. Such an increase is expected owing to photo-induced rotation of the two methyl groups around the major axis of the molecule.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Riccardo Tommasini, Christof Root, Markus Braun, Peter Gilch, Wolfgang Zinth, and Ernst E. Fill "Ultrafast x-ray diffraction studies on Si(111) and DMABN crystals using Cu-K-α radiation", Proc. SPIE 5196, Laser-Generated and Other Laboratory X-Ray and EUV Sources, Optics, and Applications, (7 January 2004);


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