Characterization of the HEFT CdZnTe pixel detectors

C. M. Hubert Chen; Walter R Cook; Fiona A Harrison; Jiao Y Y Lin; Peter H Mao; Stephen M Schindler

doi:10.1117/12.506075

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20 January 2004 Characterization of the HEFT CdZnTe pixel detectors

C. M. Hubert Chen, Walter R Cook, Fiona A Harrison, Jiao Y Y Lin, Peter H Mao, Stephen M Schindler

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Proceedings Volume 5198, Hard X-Ray and Gamma-Ray Detector Physics V; (2004) https://doi.org/10.1117/12.506075
Event: Optical Science and Technology, SPIE's 48th Annual Meeting, 2003, San Diego, California, United States

Abstract

We have developed large format CdZnTe pixel detectors optimized for astrophysical applications. The detectors, designed for the High Energy Focusing Telescope (HEFT) balloon experiment, each consists of an array of 24x44 pixels, on a 498 μm pitch. Each of the anode segments on a CdZnTe sensor is bonded to a custom, low-noise application-specific integrated circuit (ASIC)optimized to achieve low threshold and good energy resolution. We have studied detectors fabricated by two different bonding methods and corresponding anode plane designs---the first detector has a steering electrode grid, and is bonded to the ASIC with indium bumps; the second detector has no grid but a narrower gap between anode contacts, and is bonded to the ASIC with conductive epoxy bumps and gold stud bumps in series. In this paper, we present results from detailed X-ray testing of the HEFT pixel detectors. This includes measurements of the energy resolution for both single-pixel and split-pixel events, and characterization of the effects of charge trapping, electrode biases and temperature on the spectral performance. Detectors from the two bonding methods are contrasted.

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C. M. Hubert Chen, Walter R Cook, Fiona A Harrison, Jiao Y Y Lin, Peter H Mao, and Stephen M Schindler "Characterization of the HEFT CdZnTe pixel detectors", Proc. SPIE 5198, Hard X-Ray and Gamma-Ray Detector Physics V, (20 January 2004); https://doi.org/10.1117/12.506075

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