Growth of high-resistivity CdTe and (Cd,Zn)Te crystals

Michael Fiederle; Alex Fauler; Vladimir Babentsov; J. P. Konrath; Jan Franc

doi:10.1117/12.506032

20 January 2004 Growth of high-resistivity CdTe and (Cd,Zn)Te crystals

Michael Fiederle, Alex Fauler, Vladimir Babentsov, J. P. Konrath, Jan Franc

Proceedings Volume 5198, Hard X-Ray and Gamma-Ray Detector Physics V; (2004) https://doi.org/10.1117/12.506032
Event: Optical Science and Technology, SPIE's 48th Annual Meeting, 2003, San Diego, California, United States

Abstract

CdTe and (Cd,Zn)Te high resistivity crystals were grown by the Vertical Bridgman method with diameters from 25 mm up to 75 mm. Different dopants had been applied to obtain resistivities of 5 x 10⁸ Ωcm up to 2 x 10¹⁰ Ωcm and 3 x 10^-3 cm²/V for the mobility-lifetime product for electrons for the indium doped material.

Citation Download Citation

Michael Fiederle, Alex Fauler, Vladimir Babentsov, J. P. Konrath, and Jan Franc "Growth of high-resistivity CdTe and (Cd,Zn)Te crystals", Proc. SPIE 5198, Hard X-Ray and Gamma-Ray Detector Physics V, (20 January 2004); https://doi.org/10.1117/12.506032

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