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21 October 2003 Unique nonlinear optical and electronic properties of SiC:Ge waveguide for device applications
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Abstract
Using a combination of ion implantation and laser ablation techniques, a waveguide of ion implanted SiC:Ga:Ge was fabricated and was used as a CO2 laser line selector. It was observed that the CO2 laser produces a thermal grating which drives the optical selector with maximum efficiency of 40 MHz of laser offset between the 9P20 and 9P18 CO2 laser lines. Using an external electric field, the moving thermal grating produces a 45 MHz offset between the laser lines. This phenomenon will be explained using the Kukhtarev model. The threshold of the thermal damage for the waveguide and the device limiting will be presented.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Abdalla M. Darwish, Brent D. Koplitz, Nicholai V. Kukhtarev, Oliva Mitchell, R. Haydel, G. Gomlak, and R. Combs "Unique nonlinear optical and electronic properties of SiC:Ge waveguide for device applications", Proc. SPIE 5206, Photorefractive Fiber and Crystal Devices: Materials, Optical Properties, and Applications IX, (21 October 2003); https://doi.org/10.1117/12.507889
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