Unique nonlinear optical and electronic properties of SiC:Ge waveguide for device applications

Abdalla M. Darwish; Brent D. Koplitz; Nicholai V. Kukhtarev; Oliva Mitchell; R. Haydel; G. Gomlak; R. Combs

doi:10.1117/12.507889

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21 October 2003 Unique nonlinear optical and electronic properties of SiC:Ge waveguide for device applications

Abdalla M. Darwish, Brent D. Koplitz, Nicholai V. Kukhtarev, Oliva Mitchell, R. Haydel, G. Gomlak, R. Combs

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Proceedings Volume 5206, Photorefractive Fiber and Crystal Devices: Materials, Optical Properties, and Applications IX; (2003) https://doi.org/10.1117/12.507889
Event: Optical Science and Technology, SPIE's 48th Annual Meeting, 2003, San Diego, California, United States

Abstract

Using a combination of ion implantation and laser ablation techniques, a waveguide of ion implanted SiC:Ga:Ge was fabricated and was used as a CO₂ laser line selector. It was observed that the CO₂ laser produces a thermal grating which drives the optical selector with maximum efficiency of 40 MHz of laser offset between the 9P20 and 9P18 CO2 laser lines. Using an external electric field, the moving thermal grating produces a 45 MHz offset between the laser lines. This phenomenon will be explained using the Kukhtarev model. The threshold of the thermal damage for the waveguide and the device limiting will be presented.

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Abdalla M. Darwish, Brent D. Koplitz, Nicholai V. Kukhtarev, Oliva Mitchell, R. Haydel, G. Gomlak, and R. Combs "Unique nonlinear optical and electronic properties of SiC:Ge waveguide for device applications", Proc. SPIE 5206, Photorefractive Fiber and Crystal Devices: Materials, Optical Properties, and Applications IX, (21 October 2003); https://doi.org/10.1117/12.507889

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