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8 December 2003 High-operability SWIR HgCdTe focal plane arrays
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SWIR HgCdTe photodiode test chips and 256x256 Focal Plane arrays with a 2.1 micron cutoff wavelength have been fabricated and tested. The base material was n-type HgCdTe. P-type junctions were created by ion implantation. Test chip arrays with 60-micron pixels exhibited an average RoA of 509 ohm-cm2 and internal quantum efficiency (QE) of 98% at 295 K; RoA and QE were uniform. Average RoA increased to 2.22x104 at 250 K and internal QE remained high at 93%. The mini-array of 30-micron pixels had lower RoA values, 152 and 6.24x103 ohm-cm2 at 295 and 250 K, but 100% internal quantum efficiency at both temperatures. There was no bias dependence of quantum efficiency, demonstrating that our junction formation process does not give rise to valence band barriers. FPA test data have demonstrated NEI operability greater than 98% at 220 K and greater than 97% at 250 K along with QE operability in excess of 99.9% at 220 K and in excess of 99.8% at 250 K.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Honnavalli R Vydyanath, Phil Lamarre, Stephen P. Tobin, Allen W. Hairston, Peter W. Norton, and Latika S. R. Becker "High-operability SWIR HgCdTe focal plane arrays", Proc. SPIE 5209, Materials for Infrared Detectors III, (8 December 2003);

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