Polycrystalline SiGe technology for uncooled microbolometer arrays

Vladimir N. Leonov; Claus Goessens; Chris Van Hoof; Bob Grietens; Natalia A. Perova; Volodymyr Malyutenko

doi:10.1117/12.505836

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8 December 2003 Polycrystalline SiGe technology for uncooled microbolometer arrays

Vladimir N. Leonov, Claus Goessens, Chris Van Hoof, Bob Grietens, Natalia A. Perova, Volodymyr Malyutenko

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Proceedings Volume 5209, Materials for Infrared Detectors III; (2003) https://doi.org/10.1117/12.505836
Event: Optical Science and Technology, SPIE's 48th Annual Meeting, 2003, San Diego, California, United States

Abstract

The technology for the small-size focal plane arrays and linear arrays of polycrystalline SiGe microbolometers is developed at IMEC and successfully transferred to its industrial partner XenICs. A NETD of about 100 mK is achievable at the readout level on 14×14 and 200×1 arrays with 50 - 60 μm pixel pitch at a time constant of 20 - 25 ms. The design of pixels provides very precise tuning of the infrared resonant cavity. The resistance and TCR nonuniformity with σ/μ better than 0.2% combined with about 1% noise nonuniformity and 100% pixel operability are demonstrated. The first lot of arrays has been characterized, the arrays have been assembled with hybrid readout chips, supplied with the dedicated evaluation board and a software, and the results of system testing are being reported. The possibility to use the SiGe arrays as infrared emitters has been investigated for the first time and the results are presented as well.

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Vladimir N. Leonov, Claus Goessens, Chris Van Hoof, Bob Grietens, Natalia A. Perova, and Volodymyr Malyutenko "Polycrystalline SiGe technology for uncooled microbolometer arrays", Proc. SPIE 5209, Materials for Infrared Detectors III, (8 December 2003); https://doi.org/10.1117/12.505836

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