Slow charge recombination at a dye-sensitized nanocrystalline TiO2/organic semiconductor heterojunction employing Al2O3 coatings

Saif A Haque; Emilio Palomares; Cigang Xu; Robert J. Potter; Andrew B. Holmes; James R. Durrant

doi:10.1117/12.505789

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6 February 2004 Slow charge recombination at a dye-sensitized nanocrystalline TiO₂/organic semiconductor heterojunction employing Al₂O₃ coatings

Saif A Haque, Emilio Palomares, Cigang Xu, Robert J. Potter, Andrew B. Holmes, James R. Durrant

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Proceedings Volume 5215, Organic Photovoltaics IV; (2004) https://doi.org/10.1117/12.505789
Event: Optical Science and Technology, SPIE's 48th Annual Meeting, 2003, San Diego, California, United States

Abstract

Control of charge interfacial charge transfer is central to the design of photovoltaic devices. We report herein the application of insulating metal oxide blocking layers to control the charge recombination kinetics at a solid-state dye sensitised nanocrystalline inorganic/organic semiconductor interface. We show that the conformal growth of a ~1 nm thick overlayer of Al₂O₃ on a preformed nanocrystalline TiO₂ film results in a ~3-fold retardation in the rate of charge recombination at such an interface. This observation shows a good correlation with the current/voltage characteristics of dye sensitized nanocrystalline solar cells fabricated from such films, with the Al₂O₃ coating resulting in a 40% improvement in overall device efficiency

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Saif A Haque, Emilio Palomares, Cigang Xu, Robert J. Potter, Andrew B. Holmes, and James R. Durrant "Slow charge recombination at a dye-sensitized nanocrystalline TiO₂/organic semiconductor heterojunction employing Al₂O₃ coatings", Proc. SPIE 5215, Organic Photovoltaics IV, (6 February 2004); https://doi.org/10.1117/12.505789

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