Preparation of organic monolayers on uniform and patterned silicon substrates

Nils Hartmann; Thorsten Balgar; Rafael Bautista; Daniel Dahlhaus; Steffen Franzka; Eckart Hasselbrink

doi:10.1117/12.504782

4 December 2003 Preparation of organic monolayers on uniform and patterned silicon substrates

Nils Hartmann, Thorsten Balgar, Rafael Bautista, Daniel Dahlhaus, Steffen Franzka, Eckart Hasselbrink

Proceedings Volume 5223, Physical Chemistry of Interfaces and Nanomaterials II; (2003) https://doi.org/10.1117/12.504782
Event: Optical Science and Technology, SPIE's 48th Annual Meeting, 2003, San Diego, California, United States

Abstract

The growth of self-assembled alkylsiloxane monolayers on uniform and patterned silicon substrates has been investigated at room temperature using atomic force microscopy (AFM), contact angle measurements and quartz crystal microbalance (QCM) gravimetry. Immersion of oxidized silicon substrates in a millimolar solution of octadecyltrichlorosilane (OTS) results in the formation of ordered octadecylsiloxane islands with a height close to 2.5 nm. In the area between these islands an additional - presumably disordered - adsorbate layer with a height of about 0.6 nm can be identified. The overall uptake-curves show subtle but significant deviations from the generally assumed first-order Langmuir adsorption kinetics. A nearly perfect fit, however, can be achieved on the basis of a simple model considering the adsorption of initially disordered species which subsequently transform into ordered islands. In this model, the disordered species are believed to occupy a larger surface area per entity and hence prevent adsorption of further molecules before rearrangement takes place. In contrast to oxidized silicon substrates, H-terminated areas on silicon substrates appear to remain uncoated after immersion into an OTS solution. Considering these results, a laser direct writing technique has been used in order to create arbitrarily patterned silicon substrates which expose H-terminated as well as oxidized areas. Starting with a uniformly H-terminated silicon surface this technique allows for writing oxide lines with a lateral resolution arround 500 nm suitable for the selective coating with an alkylsiloxane monolayer.

Citation Download Citation

Nils Hartmann, Thorsten Balgar, Rafael Bautista, Daniel Dahlhaus, Steffen Franzka, and Eckart Hasselbrink "Preparation of organic monolayers on uniform and patterned silicon substrates", Proc. SPIE 5223, Physical Chemistry of Interfaces and Nanomaterials II, (4 December 2003); https://doi.org/10.1117/12.504782

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