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14 August 2003 Silicon resonant-cavity-enhanced photodetector arrays for optical interconnects
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Abstract
High bandwidth short distance communications standards are being developed based on parallel optical interconnect fiber arrays to meet the needs of increasing data rates of inter-chip communication in modern computer architecture. To ensure that this standard becomes an attractive option for computer systems, low cost components must be implemented on both the transmitting and receiving end of the fibers. To meet this low cost requirement silicon based receiver circuits are the most viable option, however, manufacturing high speed, high efficiency silicon photodetectors presents a technical challenge. Resonant cavity enhanced (RCE) Si photodetectors have been shown to provide the required bandwidth-efficiency product and we have recently developed a method to reproduce them through commercially available fabrication techniques. In this work, commercially reproducible silicon wafers with a 90% reflectance buried distributed Bragg reflector (DBR) are used to create Si-RCE photodetector arrays for optical interconnects. The Si-RCE photodetectors have 40% quantum efficiency at 860 nm, a FWHM of 25 ps, and a 3dB bandwidth in excess of 10 GHz. We also demonstrate Si-RCE 12×1 photodetector arrays that have been fabricated and packaged with silicon based amplifiers to demonstrate the feasibility of a low cost monolithic silicon photoreceiver array.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Matthew K. Emsley, Olufemi Isiade Dosunmu, Paul Muller, M. Selim Unlu, and Yusuf Leblebici "Silicon resonant-cavity-enhanced photodetector arrays for optical interconnects", Proc. SPIE 5246, Active and Passive Optical Components for WDM Communications III, (14 August 2003); https://doi.org/10.1117/12.511211
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