Open Access Paper
14 August 2003 Wavelength engineering of surface-emitting lasers for high-capacity short-reach systems
Author Affiliations +
Abstract
In this paper, we present the wavelength engineering of surface emitting lasers for use in high speed short reach systems, which may include the wavelength expansion, the wavelength integration and the wavelength stabilization based on fully monolithic VCSEL technologies. We have developed highly strained GaInAs/GaAs QW VCSELs emitting at 1.1-1.2 μm band and GaInNAs/GaAs VCSELs at 1.3 μm wavelength. Excellent temperature characteristics have been realized. We extended the emission wavelength of highly strained GaInAs QWs up to 1.2 μm and demonstrated low threshold operations of 1.3 μm GaInNAs lasers grown by MOCVD. We carried out the growth of highly strained GaInAs/GaAs quantum wells on a patterned substrate for realizing multiple wavelength VCSEL arrays in a wide wavelength span. We demonstrated a single-mode multiple-wavelength VCSEL array on a patterned GaAs substrate covering a new wavelength window of 1.1- 1.2 μm. By optimizing a pattern shape, we achieved multiple-wavelength operation with widely and precisely controlled lasing wavelengths. The maximum lasing span is over 190 nm. We proposed and demonstrated a micromachined tunable vertical cavity with a stress control layer, which gives us novel functions including temperature insensitive operation, thermal wavelength tuning, and so on. Either temperature insensitive operation or wide wavelength tuning induced by temperature change can be realized. The temperature insensitive VCSEL based on this technology may be helpful for decreasing the channel spacing in coarse WDM systems. We demonstrated long wavelength GaInAs and GaInNAs VCSELs on GaAs substrates, enabling uncooled operation for high speed data transmission in single-mode fibers. The multiple-wavelength array and wavelength engineering of VCSELs may open up ultra-high capacity short reach systems.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fumio Koyama "Wavelength engineering of surface-emitting lasers for high-capacity short-reach systems", Proc. SPIE 5246, Active and Passive Optical Components for WDM Communications III, (14 August 2003); https://doi.org/10.1117/12.510564
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Vertical cavity surface emitting lasers

Gallium arsenide

Wavelength tuning

Quantum wells

Data transmission

Single mode fibers

Temperature metrology

RELATED CONTENT

Recent progress in 1.3 and 1.5 um waveband wafer...
Proceedings of SPIE (November 09 2016)
GaInNAs-based long-wavelength lasers grown by MOCVD
Proceedings of SPIE (June 06 2001)
850-nm VCSELs optimized for cryogenic data transmission
Proceedings of SPIE (February 07 2012)
MBE growth of low-threshold-current InGaAs VCSEL structure
Proceedings of SPIE (September 24 1996)

Back to Top