Wafer-bonded VCSELs with tunnel junctions

Manish Mehta; Vijay Jayaraman; Andrew Jackson; Shaomin Wu; Yae Okuno; Joachim Piprek; John E. Bowers

doi:10.1117/12.511773

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8 December 2003 Wafer-bonded VCSELs with tunnel junctions

Manish Mehta, Vijay Jayaraman, Andrew Jackson, Shaomin Wu, Yae Okuno, Joachim Piprek, John E. Bowers

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Proceedings Volume 5248, Semiconductor Optoelectronic Devices for Lightwave Communication; (2003) https://doi.org/10.1117/12.511773
Event: ITCom 2003, 2003, Orlando, Florida, United States

Abstract

We introduce a scheme incorporating wafer bonding and tunnel junctions to improve the performance long-wavelength Vertical Cavity Surface Emitting Lasers (VCSELs). Through careful design of PL-mode offset, mirror reflectivity, and aperture definition, we achieve lasing to 134°C, output power above 2 mW, single-mode output power at 80°C above 1 mW, and differential efficiencies of 46%. We achieve lasing at wavelengths as high as 1336 nm and show a versatile design that can be applied to any VCSEL functioning at long wavelengths.

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Manish Mehta, Vijay Jayaraman, Andrew Jackson, Shaomin Wu, Yae Okuno, Joachim Piprek, and John E. Bowers "Wafer-bonded VCSELs with tunnel junctions", Proc. SPIE 5248, Semiconductor Optoelectronic Devices for Lightwave Communication, (8 December 2003); https://doi.org/10.1117/12.511773

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