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8 December 2003 Wafer-bonded VCSELs with tunnel junctions
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Abstract
We introduce a scheme incorporating wafer bonding and tunnel junctions to improve the performance long-wavelength Vertical Cavity Surface Emitting Lasers (VCSELs). Through careful design of PL-mode offset, mirror reflectivity, and aperture definition, we achieve lasing to 134°C, output power above 2 mW, single-mode output power at 80°C above 1 mW, and differential efficiencies of 46%. We achieve lasing at wavelengths as high as 1336 nm and show a versatile design that can be applied to any VCSEL functioning at long wavelengths.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Manish Mehta, Vijay Jayaraman, Andrew Jackson, Shaomin Wu, Yae Okuno, Joachim Piprek, and John E. Bowers "Wafer-bonded VCSELs with tunnel junctions", Proc. SPIE 5248, Semiconductor Optoelectronic Devices for Lightwave Communication, (8 December 2003); https://doi.org/10.1117/12.511773
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