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25 February 2004 EUV and soft x-ray multilayer optics
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The demand to enhance the optical resolution, to structure and observe ever smaller details, has pushed the way towards the EUV and soft X-rays. Induced mainly by the production of more powerful electronic circuits with the aid of projection lithography, optics developments in recent years can be characterized by the use of electromagnetic radiation with smaller wavelength. The good prospects of the EUV and soft X-rays for next generation lithography systems (λ = 13.5 nm), microscopy in the "water window" (λ = 2.3 - 4.4 nm), astronomy (λ = 5 - 31 nm), spectroscopy, plasma diagnostics and EUV/soft X-ray laser research have led to considerable progress in the development of different mulilayer optics. Since optical systems in the EUV/soft X-ray spectral region consist of several mirror elements a maximum reflectivity of each multilayer is essential for a high throughput. This paper covers recent results of the enhanced spectral behavior of Mo/Si, Cr/Sc and Sc/Si multilayer optics.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Norbert Kaiser, Sergiy Yulin, Torsten Feigl, Helmut Bernitzki, and Hans Lauth "EUV and soft x-ray multilayer optics", Proc. SPIE 5250, Advances in Optical Thin Films, (25 February 2004);

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