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25 February 2004 Optical bonding of high-refractive-index semiconductors using index-matched chalcogenide glass
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Abstract
A technique for bonding semiconductor optics is described. A thin film of chalcogenide glass is sputtered onto each surface to be bonded. The sputtered films are then placed in close contact and heated at low temperature under pressure to cause them to fuse. With careful choice of materials the resulting interface is virtually invisible. The technique has been demonstrated with gallium arsenide plates. A quaternary chalcogenide glass has been developed with a refractive index within 3% of that of gallium arsenide (3.34 @ 2.07μm). The glass sputters with no change in composition onto the surfaces of the plates to be bonded. Heat treatment at less than 200°C results in an interface with an optical absorption of less than 0.1% measured using a laser calorimeter operating at 2.07μm. The absorption of the structure was similar to that of an equivalent single piece of gallium arsenide.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Euan J McBrearty, Paul Mason, David Orchard, Michael Harris, and Keith Lewis "Optical bonding of high-refractive-index semiconductors using index-matched chalcogenide glass", Proc. SPIE 5250, Advances in Optical Thin Films, (25 February 2004); https://doi.org/10.1117/12.513577
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