Paper
17 December 2003 ART structures: a wafer targeting system that relaxes the mean-to-target reticle specification
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Abstract
High-speed production of semiconductor devices demands in-line wafer metrology on a minimum number of sample points. If this data does not represent the average chip feature size, then an in-line monitor may indicate that a wafer is right on target. However, at end-of-line testing, the electrical parameters, incorporating all features within the chip, may be found shifted away from target. This paper presents a solution which increases wafer critical dimension targeting efficiency while notably relaxing the traditional mean-to-target reticle specification. By embedding ART (Average Representative Targeting) Structures into the reticle scribe, Reticle Engineering at LSI Logic leverage off the ability to adjust wafer exposure dose to compensate for off target reticle CDs. The novel targeting structure described in this paper assures average wafer CDs within 2.5 nm of target while effectively doubling the acceptable range for a standard mean to target reticle specification.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert Muller, Mark Simmons, and Duane Barber "ART structures: a wafer targeting system that relaxes the mean-to-target reticle specification", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); https://doi.org/10.1117/12.518159
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KEYWORDS
Reticles

Semiconducting wafers

Critical dimension metrology

Metrology

Photomasks

Time metrology

Tolerancing

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