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17 December 2003 Cell projection EB exposure for Giga DRAM device mask
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Abstract
We have developed a new method to make cell projection aperture with high degree of accuracy which provides stable and accurate pattern fidelity on wafer and could be adaptable to mask process. As an electron beam mask, deep and vertical silicon pattern is made by MERIE poly etcher. Trench pattern profile can be optimized by etching chemistry. And to obtain fine pattern with cell projection exposure, various techniques are used such as pattern fracturing, modified cell aperture layout and shot shift. As a feasibility of cell projection EB exposure, 0.2μm feature were defined with VSB (variable shaped beam) and CPB (cell projection beam) on wafer and evaluated.
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Jae Cheon Shin, Munki Lim, Youngmo Lee, Bo-Kyung Choi, Yongkyoo Choi, and Oscar Han "Cell projection EB exposure for Giga DRAM device mask", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); https://doi.org/10.1117/12.518332
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