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17 December 2003 DUV laser lithography for photomask fabrication
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In the recent past significant work has been done to isolate and characterize suitable single layer Chemically Amplified Resist (CAR) systems for DUV printing applicable to photomask fabrication. This work is complicated by the inherent instability of most DUV CAR systems, particularly in air, showing unacceptable CD degradation over the normal photomask write time in today's DUV mask pattern generators. The high reflectivity of most photomask substrates at DUV wavelengths, creating unacceptable standing waves in the photo resist profile, further compounds this problem. A single layer CAR system suitable for 90nm technology node mask fabrication with DUV printing has been characterized and optimized. Results of this optimization in terms of relevant mask making parameters will be detailed. Furthermore, comparison of the properties of this resist system to other commercially available systems, including FEP-171, will be shown. The pattern fidelity of DUV laser generated masks has been studied in considerable detail. A demonstration of the capabilities of the Etec Systems ALTATM 4300 and Micronic Laser Systems Sigma 7100 DUV mask writing systems will be shown. The pattern fidelity achieved will be compared/contrasted to that achieved with today's leading edge 50KeV vector scan e-beam systems. Advanced methods for modulating the DUV printed patterns' fidelity will be detailed. Finally, the cost and cycle time implications of inserting the DUV laser pattern generator into the mask manufacturing flow will be discussed.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Curt A. Jackson, Peter Buck, Sarah Cohen, Vishal Garg, Charles Howard, Robert Kiefer, John Manfredo, and James Tsou "DUV laser lithography for photomask fabrication", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003);


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