Translator Disclaimer
17 December 2003 EUV substrate and blank inspection with confocal microscopy
Author Affiliations +
One of the key challenges for the successful implementation of EUV Lithography (EUVL) is the supply of defect free mask blanks. Obviously a reliable defect inspection is a prerequisite to achieve this goal. We report results from a EUVL blank inspection tool developed by Lasertec. The inspection principle of this tool is based on confocal microscopy at 488nm inspection wavelength. On quartz substrates a sensitivity of 60nm is demonstrated. On buried defects in the multilayer stack a reasonable capture rate down to approximately 25nm defect height has been measured. We compare these results to previously reported data on the wafer version (M350) of the current M1350.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jan-Peter Urbach, Jan F. W. Cavelaars, Hal Kusunose, Ted Liang, and Alan R. Stivers "EUV substrate and blank inspection with confocal microscopy", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003);


EUV mask defect analysis from mask to wafer printing
Proceedings of SPIE (April 01 2013)
Actinic inspection of multilayer defects on EUV masks
Proceedings of SPIE (May 06 2005)
EUV blank inspection
Proceedings of SPIE (May 02 2008)
Study of EUV mask e-beam inspection conditions for HVM
Proceedings of SPIE (January 24 2012)

Back to Top