Effect of mask pattern fidelity on 193-nm lithography performance

Ching Chi Cheng; Tsung-Lin Su; Fei-Geo Tsai; Tsong-Hsien Tsai; Chin-Chiang Tu; Chue-San Yoo

doi:10.1117/12.517829

17 December 2003 Effect of mask pattern fidelity on 193-nm lithography performance

Ching Chi Cheng, Tsung-Lin Su, Fei-Geo Tsai, Tsong-Hsien Tsai, Chin-Chiang Tu, Chue-San Yoo

Proceedings Volume 5256, 23rd Annual BACUS Symposium on Photomask Technology; (2003) https://doi.org/10.1117/12.517829
Event: Photomask Technology, 2003, Monterey, California, United States

Abstract

As device technology shrinks beyond 0.13um, extensive resolution enhancement techniques such as PSM and OPC are employed in an attempt to gain usable photo process windows. Pattern fidelity on a mask measured in terms of corner rounding and line end shortening significantly influences the expected wafer performance. In this work, we report the effects of mask making parameters on the mask pattern fidelity and the resulting wafer pattern fidelity.

Citation Download Citation

Ching Chi Cheng, Tsung-Lin Su, Fei-Geo Tsai, Tsong-Hsien Tsai, Chin-Chiang Tu, and Chue-San Yoo "Effect of mask pattern fidelity on 193-nm lithography performance", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); https://doi.org/10.1117/12.517829

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