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17 December 2003 Effect of mask pattern fidelity on 193-nm lithography performance
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Abstract
As device technology shrinks beyond 0.13um, extensive resolution enhancement techniques such as PSM and OPC are employed in an attempt to gain usable photo process windows. Pattern fidelity on a mask measured in terms of corner rounding and line end shortening significantly influences the expected wafer performance. In this work, we report the effects of mask making parameters on the mask pattern fidelity and the resulting wafer pattern fidelity.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ching Chi Cheng, Tsung-Lin Su, Fei-Geo Tsai, Tsong-Hsien Tsai, Chin-Chiang Tu, and Chue-San Yoo "Effect of mask pattern fidelity on 193-nm lithography performance", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); https://doi.org/10.1117/12.517829
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