Examination of various endpoint methods for chrome mask etch

Corey Collard; Scott A. Anderson; Rex B. Anderson III; Jason O. Clevenger; Monika Halim; Cynthia B. Brooks; Melisa J. Buie; Turgut Sahin

doi:10.1117/12.519188

17 December 2003 Examination of various endpoint methods for chrome mask etch

Corey Collard, Scott A. Anderson, Rex B. Anderson III, Jason O. Clevenger, Monika Halim, Cynthia B. Brooks, Melisa J. Buie, Turgut Sahin

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Proceedings Volume 5256, 23rd Annual BACUS Symposium on Photomask Technology; (2003) https://doi.org/10.1117/12.519188
Event: Photomask Technology, 2003, Monterey, California, United States

Abstract

Accurate determination of endpoint is important for creating a repeatable process that maximizes sidewall profile angle and resist selectivity while maintaining a low etch bias. An Applied Materials EyeD (TM) spectrometer on the Tetra(TM) II photomask etch system is used to examine several endpoint methods to maximize flexibility and productivity. These methods include: slope changes to a single line, slope changes via a ratio of product and etchant species and slope changes of a linear combination of all slope changes. Endpoint identification is typically performed with a single spectral line. In addition, a method using neural networks, or principal component analysis (PCA) has also been created in order to fully optimize and characterize exact endpoint definition. Comparison between these methods will be discussed.

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Corey Collard, Scott A. Anderson, Rex B. Anderson III, Jason O. Clevenger, Monika Halim, Cynthia B. Brooks, Melisa J. Buie, and Turgut Sahin "Examination of various endpoint methods for chrome mask etch", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); https://doi.org/10.1117/12.519188

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