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17 December 2003 High-accuracy simulation-based optical proximity correction
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In times of continuing aggressive shrinking of chip layouts a thorough understanding of the pattern transfer process from layout to silicon is indispensable. We analyzed the most prominent effects limiting the control of this process for a contact layer like process, printing 140nm features of variable length and different proximity using 248nm lithography. Deviations of the photo mask from the ideal layout, in particular mask off-target and corner rounding have been identified as clearly contributing to the printing behavior. In the next step, these deviations from ideal behavior have been incorporated into the optical proximity correction (OPC) modeling process. The degree of accuracy for describing experimental data by simulation, using an OPC model modified in that manner could be increased significantly. Further improvement in modeling the optical imaging process could be accomplished by taking into account lens aberrations of the exposure tool. This suggests a high potential to improve OPC by considering the effects mentioned, delivering a significant contribution to extending the application of OPC techniques beyond current limits.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin C. Keck, Thomas Henkel, Ralf Ziebold, Christian Crell, and Jörg Thiele "High-accuracy simulation-based optical proximity correction", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003);

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