Translator Disclaimer
17 December 2003 Improvements in binary chrome CD performance utilizing an optimized 4th-generation reactor platform
Author Affiliations +
The ITRS roadmap indicates that significant improvements in photomask dry etching will be necessary to achieve the design goals of 90nm and 65nm technology node masks. Although some existing dry etch systems are capable of R&D work on these masks, a new dry etch system is needed to achieve production worthy results. To this end, a new 4th generation mask etch system was designed and built by Unaxis USA, Inc. In early testing, the Unaxis Mask Etcher 4 has demonstrated significant improvements in CD uniformity and linearity compared to earlier systems. A designed experiment (DoE) was performed on this new system to more fully characterize its performance window. The results of these experiments are presented and compared to a standard process performed on a Unaxis Mask Etcher 3.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jason Plumhoff, Chris Constantine, Jong Shin, Brad Reelfs, and Emmanuel Rausa "Improvements in binary chrome CD performance utilizing an optimized 4th-generation reactor platform", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003);


Application of HT-PSM to 180-nm logic devices
Proceedings of SPIE (December 18 1998)
CAR dry etching technology to produce 0.13 um reticle
Proceedings of SPIE (August 01 2002)
Dry etching of Cr layer and its loading effect
Proceedings of SPIE (September 05 2001)
Inductively coupled plasma etch of DUV MoSi photomasks a...
Proceedings of SPIE (December 18 1998)
Plasma etch of binary Cr masks CD uniformity study...
Proceedings of SPIE (December 30 1999)
Impact of the loading effect on CD control in plasma...
Proceedings of SPIE (December 18 1998)

Back to Top