Low-stress stencil masks using a doping method

Hideyuki Eguchi; Toshiaki Kurosu; Takashi Yoshii; Hiroshi Sugimura; Kojiro Itoh; Akira Tamura

doi:10.1117/12.519856

17 December 2003 Low-stress stencil masks using a doping method

Hideyuki Eguchi, Toshiaki Kurosu, Takashi Yoshii, Hiroshi Sugimura, Kojiro Itoh, Akira Tamura

Proceedings Volume 5256, 23rd Annual BACUS Symposium on Photomask Technology; (2003) https://doi.org/10.1117/12.519856
Event: Photomask Technology, 2003, Monterey, California, United States

Abstract

Membrane stress control is one of the challenges for the commercial success of the stencil masks, such as electron projection lithography (EPL) and low energy electron-beam proximity projection lithography (LEEPL), since a stencil mask has perforation patterns in a membrane with image placement meeting stringent error budget. First, stress-induced distortions of stencil mask membranes were simulated by a finite element method (FEM). Second, we showed how the membrane stress varies with dopant concentration, using a pressure bulge method for stress measurements of die-size specimens. The results show doping SOI substrates provide a low-stress membrane. Third, correlation between the pressure bulge method and resonance frequency technique (RFT) was investigated and showed acceptable agreement. Fourth, stress distribution measurements were taken using the RFT for a low-stress 200-mm EPL mask. Average stress value and cross-mask stress variations were 11.2 MPa and ± 1.3 MPa respectively. Therefore, we revealed reliable stress distribution data across a 200-mm EPL mask and confirmed the doping method using SOI substrate is proper approach to fabricate a low-stress 200-mm stencil mask, with high uniformity of membrane stress, for EPL and LEEPL.

Citation Download Citation

Hideyuki Eguchi, Toshiaki Kurosu, Takashi Yoshii, Hiroshi Sugimura, Kojiro Itoh, and Akira Tamura "Low-stress stencil masks using a doping method", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); https://doi.org/10.1117/12.519856

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