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17 December 2003 Manufacturing of ArF chromeless hard shifter for 65-nm technology
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For logic design, Chrome-less Phase Shift Mask is one of the possible solutions for defining small geometry with low MEF (mask enhancement factor) for the 65nm node. There have been lots of dedicated studies on the PCO (Phase Chrome Off-axis) mask technology and several design approaches have been proposed including grating background, chrome patches (or chrome shield) for applying PCO on line/space and contact pattern. In this paper, we studied the feasibility of grating design for line and contact pattern. The design of the grating pattern was provided from the EM simulation software (TEMPEST) and the aerial image simulation software. AIMS measurements with high NA annular illumination were done. Resist images were taken on designed pattern in different focus. Simulations, AIMS are compared to verify the consistency of the process with wafer printed performance.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Keun-Taek Park, Laurent Dieu, Greg P. Hughes, Kent G. Green, Ebo H. Croffie, and Kunal N. Taravade "Manufacturing of ArF chromeless hard shifter for 65-nm technology", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003);

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