Optimization of nanomachining repair condition for ArF lithography

Tsuyoshi Amano; Masaharu Nishiguchi; Hiroyuki Hashimoto; Yasutaka Morikawa; Naoya Hayashi; Roy White; Ron Bozak; Lee Terrill

doi:10.1117/12.518025

17 December 2003 Optimization of nanomachining repair condition for ArF lithography

Tsuyoshi Amano, Masaharu Nishiguchi, Hiroyuki Hashimoto, Yasutaka Morikawa, Naoya Hayashi, Roy White, Ron Bozak, Lee Terrill

Author Affiliations +

Proceedings Volume 5256, 23rd Annual BACUS Symposium on Photomask Technology; (2003) https://doi.org/10.1117/12.518025
Event: Photomask Technology, 2003, Monterey, California, United States

Abstract

Nanomachining is a new technique for repairing photomask defects. The advantages of this technique are no substrate damage, precise edge placement position and Z height accuracy when compared with current Laser zapper or FIB GAE repair techniques. We have reported that this technique can be applied to any type of opaque film material defects, quartz bump defects on Alternating Aperture Phase Sifting Masks (AAPSM) and complex pattern defect repairs. In this report, we have evaluated about the optimization of Nanomachining condition for repairing most advanced photomasks for 193nm lithography on the materials of binary chrome and MoSi HT-PSM. Evaluation items are adequate edge position and Z height for targeting to achieve better printing performance when analyzed with an AIMS 193nm tool.

Citation Download Citation

Tsuyoshi Amano, Masaharu Nishiguchi, Hiroyuki Hashimoto, Yasutaka Morikawa, Naoya Hayashi, Roy White, Ron Bozak, and Lee Terrill "Optimization of nanomachining repair condition for ArF lithography", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); https://doi.org/10.1117/12.518025

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