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17 December 2003 Research on the origin of particle generation in ICP plasma reactor
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As the design rule is decreased rapidly, tighter critical dimension (CD) control is highly requested in photomask process. Accordingly, instead of wet etching to make an isotropic pattern, dry etching has been increasingly applied for an anisotropic pattern transfer in order to get an accurate critical dimension (CD). Since the dry etching process was employed for the fabrication of photomask, particles in plasma reactor has been a big issue. It is being currently recognized that the splinters of polymers, defectively stunk on the reactor wall leading to the particles as plasma is ignited by radio-frequency (RF) power. Hence, wet cleaning used to be performed for the purpose of removing the particle source. Nevertheless, this method is not able to remove particles perfectly in the plasma reactor. Frequently the number of the particle is not changed before and after wet cleaning, particularly in ICP reactor. In this paper, we studied the characteristics of the plasma chemistry and the behavior of ions in ICP reactor. The origin of the particle generation was investigated by the analysis of the composition and configuration of particles. Finally, solutions will be suggested to reduce the particle with low damage on the insulator based on the above studies.
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Jeong-Yoon Lee, Nam-Kyu Kim, Il-Yong Jang, Sung-Yong Mun, Sung-Woon Choi, and Jung-Min Sohn "Research on the origin of particle generation in ICP plasma reactor", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003);


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