Paper
17 December 2003 Toward large-area simulation of e-beam lithography
Martin Bohn, Ulrich Hofmann, Wolfgang Hoppe, Christopher J. Progler, Michael Ryzhoukhin
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Abstract
As in optical lithography, E-beam lithography is facing a multitude of issues, both in mask making and in direct write applications. These issues range from pattern printability and design verifications to tool and process optimizations. Simulation can be used to address these issues, however its applicability was limited due to limitations in the usable simulation area. Advances in the mathematical models lead to a significant speedup of the simulation, enabling the simulation of larger areas. This paper will demonstrate the applicability of the new simulator on a few key examples, such as aggressive mask challenges, model to experiment correlations as well as its application to direct write.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin Bohn, Ulrich Hofmann, Wolfgang Hoppe, Christopher J. Progler, and Michael Ryzhoukhin "Toward large-area simulation of e-beam lithography", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); https://doi.org/10.1117/12.520812
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CITATIONS
Cited by 4 scholarly publications.
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KEYWORDS
Optical proximity correction

Electron beam lithography

Monte Carlo methods

Photomasks

Mathematical modeling

Computer simulations

Lithography

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