CdTe:Ti crystals: materials for optical sensors in the near-IR region

Yuriy P. Gnatenko; Roman V. Gamernyk; Anatoly O. Borshch; Nickolai Kukhtarev; Tatiana Kukhtareva; Petro M. Bukivskij; Ivan O. Faryna; Vladyslav I. Volkov; Stepan Yu. Paranchych; Lidia D. Paranchych

doi:10.1117/12.515501

8 March 2004 CdTe:Ti crystals: materials for optical sensors in the near-IR region

Yuriy P. Gnatenko, Roman V. Gamernyk, Anatoly O. Borshch, Nickolai Kukhtarev, Tatiana Kukhtareva, Petro M. Bukivskij, Ivan O. Faryna, Vladyslav I. Volkov, Stepan Yu. Paranchych, Lidia D. Paranchych

Author Affiliations +

Proceedings Volume 5272, Industrial and Highway Sensors Technology; (2004) https://doi.org/10.1117/12.515501
Event: Optical Technologies for Industrial, Environmental, and Biological Sensing, 2003, Providence, RI, United States

Abstract

The Ti-doped CdTe semiinsulating crystals of high optical quality were grown by the vertical Bridgman technique. The complex optical, photoelectric and photorefractive measurements of CdTe doped with Ti atoms were carried out. It allowed to our knowledge for the first time to determine the photorefractive characteristics of these crystals. Studies of the optical absorption and photodiffusion current made it possible to determine the nature and energy structure of impurity and intrinsic defects as well as to establish their role in the photorefractive effect. It was shown that the excited ³T₁(P) state is in resonance with the conduction band. As a result of it the auto-ionization of electrons to the conduction band under the laser excitation take place. The energy-level diagram both of impurity and intrinsic defects in the CdTe:Ti crystals was constructed. It was shown that titanium dopant have advantage over other dopants and that CdTe:Ti has better characteristics for a potential applications. Obtained parameters: high optical holographic gain coefficient (up to 0.60 cm^-1), low background absorption (about 0.1 - 0.2 cm^-1), high optical quality and homogeneity, almost electronic type photoconductivity (electron-hole competition factor equals 0.94) show that this material can be effectively used as sensor components for both optical and photoelectric applications in the near infrared region.

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Yuriy P. Gnatenko, Roman V. Gamernyk, Anatoly O. Borshch, Nickolai Kukhtarev, Tatiana Kukhtareva, Petro M. Bukivskij, Ivan O. Faryna, Vladyslav I. Volkov, Stepan Yu. Paranchych, and Lidia D. Paranchych "CdTe:Ti crystals: materials for optical sensors in the near-IR region", Proc. SPIE 5272, Industrial and Highway Sensors Technology, (8 March 2004); https://doi.org/10.1117/12.515501

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