Ultrashort pulse damage of semiconductors

Bernd Hüttner

doi:10.1117/12.524095

10 June 2004 Ultrashort pulse damage of semiconductors

Bernd Hüttner

Author Affiliations +

Proceedings Volume 5273, Laser-Induced Damage in Optical Materials: 2003; (2004) https://doi.org/10.1117/12.524095
Event: XXXV Annual Symposium on Optical Materials for High Power Lasers: Boulder Damage Symposium, 2003, Boulder, Colorado, United States

Abstract

First, we give a briefly critically discuss the existing definitions of melting and damage thresholds and the different kinds of experimental determinations of the thresholds. Then we investigate the thermal and athermal melting of oxides (wide-band gap semiconductors) and of silicon by solving a rate equation for the excited electrons and a by complete self-consistent solution of a coupled system of differential equations for the electron density and for the electron and phonon temperatures. In particular, we direct our attention to the still open question about the value for the critical electron density in the case of athermal melting.

Citation Download Citation

Bernd Hüttner "Ultrashort pulse damage of semiconductors", Proc. SPIE 5273, Laser-Induced Damage in Optical Materials: 2003, (10 June 2004); https://doi.org/10.1117/12.524095

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