A new domino failure mechanism in deep sub-100-nm technologies and its solution

Ge Yang; Sung-Mo Kang

doi:10.1117/12.530274

30 March 2004 A new domino failure mechanism in deep sub-100-nm technologies and its solution

Ge Yang, Sung-Mo Kang

Proceedings Volume 5274, Microelectronics: Design, Technology, and Packaging; (2004) https://doi.org/10.1117/12.530274
Event: Microelectronics, MEMS, and Nanotechnology, 2003, Perth, Australia

Abstract

The domino circuit failure is due to competing requirements of the keeper and the NMOS logic transistors that cannot be satisfied simultaneously in order to achieve the noise margin and performance objectives. Domino keeper transistor has to be upsized to compensate for the subthreshold leakage and gate leakage currents that discharge the dynamic node in deep sub-100nm technologies. Domino multiplexer can fail when the fan-in number is greater than 14 for the noise margin of 0.1 Vdd, where the noise margin is defined as the input voltage that causes 10% voltage drop at the dynamic node of Domino. In simulation, 45nm BSIM4 models were used with the power supply voltage of 0.8V. To solve this problem, we propose a dual gate oxide thickness (Tox) implementation for high fan-in Domino. With proper dual gate oxide thickness assignment, subthreshold leakage and gate leakage that discharge the dynamic node are suppressed with the keeper size reduced. Proposed circuit not only prevents the possible failure in high fan-in Domino, but also reduces the delay and power consumption due to decreased contention between the keeper and NMOS logic tree. For 14-bit domino multiplexer, proposed circuit is 56% faster with 66% less power consumption and without area penalty, compared to single Tox domino.

Citation Download Citation

Ge Yang and Sung-Mo Kang "A new domino failure mechanism in deep sub-100-nm technologies and its solution", Proc. SPIE 5274, Microelectronics: Design, Technology, and Packaging, (30 March 2004); https://doi.org/10.1117/12.530274

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available