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25 March 2004 Broadband polarization-insensitive semiconductor optical amplifiers
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Abstract
A broadband width semiconductor optical amplifier is reported using an asymmetric quantum well structure. By applying tensile strain to the quantum wells it is possible to both increase the optical bandwidth while reducing the polarization sensitivity. The effects of the ordering of the asymmetric quantum wells, length of the device and carrier density all affect the performance of the device. Using the asymmetric struture, a 90 nm region of polarization sensitivity less than 1.2 dB within the -3dB band width is achieved.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Josef A. Czaban, David A. Thompson, and Brad J. Robinson "Broadband polarization-insensitive semiconductor optical amplifiers", Proc. SPIE 5277, Photonics: Design, Technology, and Packaging, (25 March 2004); https://doi.org/10.1117/12.523964
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