Paper
12 May 2004 Angled stripe InGaAsP/InP SLED fabricated by low-damage inductively coupled plasma dry etching
Jun Zhang, Xiaodong Huang, Jin Chang, Yingjun Liu, Yi Gan, Linsong Li, Dingli Wang, Tao Liu, Shan Jiang, Ligang Deng
Author Affiliations +
Proceedings Volume 5280, Materials, Active Devices, and Optical Amplifiers; (2004) https://doi.org/10.1117/12.523504
Event: Asia-Pacific Optical and Wireless Communications, 2003, Wuhan, China
Abstract
We successfully fabricated the angled strip DC-PBH style SLED devices by using low damage ICP dry etching technology. The mesa of DC-PBH SLED was formed by Cl2/N2 ICP dry etching process. The low DC bias (<100 eV) of ICP etching technology can reduce the damage caused by ordinary RIE technique and Cl2/N2 based process can get rid of chemical damage caused by CH4/H2. High out-put power SLED device was obtained by using low damage ICP dry etching, the out-put power is 2 mW at 100 mA inject current (CW) at 25°C. Through optimized the angle of the active strip and AR optical film design, the full width of the half maximum (FWHM) of the spectrum at 2 mW out-put power can reach 46.4nm and the ripple of the SLED spectrum is low down to 0.4 dB.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jun Zhang, Xiaodong Huang, Jin Chang, Yingjun Liu, Yi Gan, Linsong Li, Dingli Wang, Tao Liu, Shan Jiang, and Ligang Deng "Angled stripe InGaAsP/InP SLED fabricated by low-damage inductively coupled plasma dry etching", Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); https://doi.org/10.1117/12.523504
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KEYWORDS
Dry etching

Etching

Antireflective coatings

Plasma

Reactive ion etching

Chlorine

Metalorganic chemical vapor deposition

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